Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-03-08
2011-03-08
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S079000, C257SE27139
Reexamination Certificate
active
07902624
ABSTRACT:
Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, a second pixel cell having a second configuration, and at least one barrier region formed between the first and second pixel cells for capturing and removing charge. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.
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Mauritzson Richard A.
Quinlin William T.
Rhodes Howard E.
Aptina Imaging Corporation
Kellogg David C.
Kraig William F
Le Thao X
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