Barrier polishing solution

Details Barrier polishing solution Barrier polishing solution

2007-08-07

2007-08-07

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C252S079400, C252S079100, C252S079200, C252S079300, C510S254000, C510S255000, C510S257000, C106S014050

Reexamination Certificate

active

10830268

ABSTRACT:
The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

REFERENCES:
patent: 5614444 (1997-03-01), Farkas et al.
patent: 5769689 (1998-06-01), Coosaboon et al.
patent: 5863838 (1999-01-01), Farkas et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6083840 (2000-07-01), Mravic et al.
patent: 6117775 (2000-09-01), Kondo et al.
patent: 6136711 (2000-10-01), Grumbine et al.
patent: 6194317 (2001-02-01), Kaisaki et al.
patent: 6316366 (2001-11-01), Kaufman et al.
patent: 6322600 (2001-11-01), Brewer et al.
patent: 6375693 (2002-04-01), Cote et al.
patent: 6376361 (2002-04-01), Chooi et al.
patent: 6409781 (2002-06-01), Wojtczak et al.
patent: 6436811 (2002-08-01), Wake et al.
patent: 6447563 (2002-09-01), Mahulikar
patent: 6468913 (2002-10-01), Pasqualoni et al.
patent: 6592433 (2003-07-01), Buehler
patent: 6692546 (2004-02-01), Ma et al.
patent: 7018560 (2006-03-01), Liu et al.
patent: 2002/0019128 (2002-02-01), Lee et al.
patent: 2002/0020134 (2002-02-01), Collard
patent: 2002/0032987 (2002-03-01), Steckenrider et al.
patent: 2002/0042199 (2002-04-01), Bian et al.
patent: 2002/0066234 (2002-06-01), Cote et al.
patent: 2002/0081853 (2002-06-01), Beitel et al.
patent: 2002/0104269 (2002-08-01), Sun et al.
patent: 2002/0106897 (2002-08-01), Bian et al.
patent: 2002/0124474 (2002-09-01), Wojtczak et al.
patent: 2002/0139055 (2002-10-01), Asano et al.
patent: 2002/0170237 (2002-11-01), Vogt et al.
patent: 2003/0064671 (2003-04-01), Pasqualoni et al.
patent: 2003/0077985 (2003-04-01), Zhou et al.
patent: 2003/0131535 (2003-07-01), Small et al.
patent: 2003/0159362 (2003-08-01), Singh et al.
patent: 2004/0009671 (2004-01-01), Kaufman et al.
patent: 2004/0020134 (2004-02-01), Kim et al.
patent: 2004/0147188 (2004-07-01), Liu et al.
patent: 2004/0203324 (2004-10-01), Smith et al.
patent: 2005/0029491 (2005-02-01), Liu
patent: 2005/0031789 (2005-02-01), Liu et al.
patent: 2005/0066585 (2005-03-01), Bian et al.
patent: 2005/0090104 (2005-04-01), Yang et al.
patent: 0 811 665 (1997-12-01), None
patent: 1 081 200 (2001-03-01), None
patent: 1 229 093 (2002-08-01), None
patent: 1 235 261 (2002-08-01), None
patent: WO 98/29515 (1998-07-01), None
patent: WO 99/67056 (1999-12-01), None
patent: WO 00/00567 (2000-01-01), None
patent: WO 00/24842 (2000-05-01), None
patent: WO01/95381 (2001-12-01), None
patent: WO 02/18099 (2002-03-01), None
patent: WO 03/072670 (2003-09-01), None
Steigerwald, J.M.; Murarka, S.P.; Duquette, D.J.; Gutmann, R.J.; “Surface Layer Formation During the Chemical Mechanical Polishing of Copper Thin Films”, Mat. Res. Soc. Symp. Proc., 1994, pp. 133-139, vol. 337; Materials Research Society.
Luo, Q.; Campbell, D.R.; Babu, S.V.; “Chemical-Mechanical Polishing of Copper in Acidic Media”; CMP-MIC Catalog No. 961SMIC-100P/96/0145, Feb. 22-23, 1996; pp. 145-151.
Carpio, R.; Farkas, J.; Jairath, R.; “Initial study on copper CMP slurry chemistries”, Thin Solid Films 266, 1995, pp. 238-244; Elsevier Science S.A.
Van Muylder, J.; Pourbaix, M.; “Tantalum(1)”, Atlas of Electrochemical Equilibria in Aqueous Solutions, Section 9.3, 1966, pp. 251-255; Pergamon Press, Oxford, England.
Brusic, V.; Kistler, R.; Wang, S.; Hawkins, J.; Schmidt, C.; “A Cautious Approach to the Removal of Ta in the CMP Polishing of Cu/Ta Structures”, Electrochemical Society Proceedings, 1998, pp. 119-125, vol. 98-7.
Li, Y.; Hariharaputhiran, M.; Babu, S.V.; “Chemical-mechanical polishing of copper and tantalum with silica abrasives”; J. Mater. Res., Apr. 2001, pp. 1066-1073, vol. 16, No. 4; Materials Research Society.
Li, Y.; Babu, S.V.; “Copper and Tantalum Chemical-Mechanical Planarisation: Some Recent Progress”; Semiconductor Fabtech, Mar. 2001, pp. 259-261, 13th Edition.
Li, Y; Babu, S.V.; “Chemical Mechanical Polishing of Copper and Tantalum in Potassium Iodate-Based Slurries”; Electrochemical and Solid-State Letters, 2001, 4 (2), pp. G20-G22; The Electrochemical Society, Inc.
Ramarajan, S.; “Chemical-Mechanical Planarization of Copper/Tantalum for Microelectronic Applicaitons”; Ph. D. Thesis, Clarkson University, Jun. 23, 2000; UMI Dissertation Services, Ann Arbor, MI.
Hariharaputhiran, M.; “Mechanism of Dissolution and Planarization of Copper/Tantalum Films during Chemical-Mechanical Polishing”, Ph. D. Thesis, Clarkson University, Jul. 24, 2000; UMI Dissertation Services, Ann Arbor, MI.

Affiliated with

Also associated with

Rating

Barrier polishing solution does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Barrier polishing solution, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier polishing solution will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3836553