Barrier metal technology for tungsten plug interconnection

Details Barrier metal technology for tungsten plug interconnection Barrier metal technology for tungsten plug interconnection

1995-01-24

1997-02-04

Turner, Archene

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

428216, 428336, 428457, 428469, 428472, 428698, 257741, 257748, 257750, 257751, 257758, H01L 2954

Patent

active

056001827

ABSTRACT:
A method for producing a relatively thin titanium nitride barrier layer in an integrated circuit is presented. The titanium nitride layer may be utilized in a tungsten plug interconnection by providing a semiconductor wafer with a conducting layer covered by an insulating layer. The insulating layer is patterned and etched to form contact holes or vias. A layer of titanium is deposited on the surface of the wafer including the sidewalls and bottom of the via. A relatively thin titanium nitride layer is then formed on the titanium layer. The formation of the titanium nitride layer includes growing titanium nitride by a reaction of a nitrogen-bearing species with the titanium layer. The titanium nitride layer prevents the underlying titanium layer from reacting with the subsequent tungsten layer which is deposited on the wafer to fill the via. The tungsten layer is then etched so that the tungsten remaining forms a plug interconnection between conducting layers.

REFERENCES:
patent: 4783248 (1988-11-01), Kohlhase
patent: 4884123 (1989-11-01), Dixit
patent: 4965656 (1990-10-01), Koubuchi
patent: 5227335 (1993-07-01), Holschwandner
patent: 5242860 (1993-09-01), Nulman

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