Barrier metal layer for a carbon nanotube flat panel display

Electric lamp and discharge devices – Discharge devices having an electrode of particular material

Reexamination Certificate

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C313S309000, C313S310000, C313S336000, C313S351000, C313S495000

Reexamination Certificate

active

06803708

ABSTRACT:

TECHNICAL FIELD
The present claimed invention relates to the field of flat panel displays. More specifically, the present claimed invention relates to a flat panel display and methods for forming a flat panel display having a barrier metal for electron emission.
BACKGROUND ART
A Cathode Ray Tube (CRT) display generally provides the best brightness, highest contrast, best color quality and largest viewing angle of prior art computer displays. CRT displays typically use a layer of phosphor which is deposited on a thin glass faceplate. These CRTs generate a picture by using one to three electron beams which generate high energy electrons that are scanned across the phosphor in a raster pattern.
The phosphor converts the electron energy into visible light so as to form the desired picture. However, prior art CRT displays are large and bulky due to the large vacuum envelopes that enclose the cathode and extend from the cathode to the faceplate of the display. Therefore, typically, other types of display technologies such as active matrix liquid crystal display, plasma display and electro-luminescent display technologies have been used in the past to form thin displays.
Recently, a thin flat panel display (FPD) has been developed which uses the same process for generating pictures as is used in CRT devices. These flat panel displays use a backplate including a matrix structure of rows and columns of electrodes. One such flat panel display is described in U.S. Pat. No. 5,541,473 which is incorporated herein by reference. Flat panel displays are typically matrixed-addressed and they comprise matrix addressing electrodes. The intersection of each row line and each column line in the matrix defines a pixel, the smallest addressable element in an electronic display.
The essence of electronic displays is the ability to turn on and off individually picture elements (pixels). A typical high information content display will have about a quarter million pixels in a 33 cm diagonal orthogonal array, each under individual control by the electronics. The pixel resolution is normally just at or below the resolving power of the eye. Thus, a good quality picture can be created from a pattern of activated pixels.
One means for generating arrays of field emission cathode structures relies on well established semiconductor micro-fabrication techniques. These techniques produce highly regular arrays of precisely shaped field emission tips. Lithography, generally used in these techniques, involves numerous processing steps, many of them wet. The number of tips per unit area, the size of the tips, and their spacing are determined by the available photoresists and the exposing radiation.
Tips produced by the method are typically cone-shaped with base diameters on the order of 0.5 to 1 &mgr;m, heights of anywhere from 0.5 to 2 &mgr;m, tip radii of tens of nanometers. This size limits the number of tips per pixel possible for high resolution displays, where large numbers (400-1000 emitters per pixel) are desirable for uniform emission to provide adequate gray levels, and to reduce the current density per tip for stability and long lifetimes. Maintaining two dimensional registry of the periodic tip arrays over large areas, such as large TV-sized screens, can also be a problem for gated field emission constructions by conventional means, resulting in poor yields and high costs.
U.S. Pat. No. 4,338,164 describes a method of preparing planar surfaces having a microstructured protuberances thereon comprising a complicated series of steps involving irradiation of a soluble material (e.g., mica) with high energy ions, as from a heavy ion accelerator, to provide column-like traces in the matrix that are subsequently etched away to be later filled with an appropriate conductive, electron-emitting material. The original soluble material is then dissolved following additional metal deposition steps that provide a conductive substrate for the electron emitting material. The method is said to produce up to 10
6
emitters per cm
2
, the emitters having a diameter of approximately 1-2 &mgr;m.
U.S. Pat. No. 5,266,530 describes a gated electron field emitter prepared by a complicated series of deposition and etching steps on a substrate, preferably crystalline.
FIG. 1
is a prior art flat CRT cathode of tungsten as a thermionic electron source are placed on a substrate. Scan electrons and data electrodes are formed on a glass plate having a plurality of holes at pixel locations. The electrodes with predetermined voltages applied thereto selectively pass the electrons emitted from the line cathode so that the electrons accelerate toward a screen and excite phosphors coated on the inner surface of the screen. Different types of emitters have been suggested in the past for the flat CRT shown in FIG.
1
.
Among these different emitters is the use of carbon nanotubes. In the carbon nanotube displays, a patterned of microstructures are disposed on a row electrode so that when voltage is applied to between the row electrode and a column electrode, electrons are emitted from the cathode to the screen to excite the phosphors on the screen to create images.
FIG. 2
shows a schematic (cross-sectional view) of a portion of a prior art matrixed addressed ungated field emission display device
10
including cathode
20
, for one embodiment of the invention. Patterned microstructure layer
12
disposed on row conductors
16
which are supported by substrate
14
provides cathode
20
. Transparent column conductors
18
generally indium ion oxide (ITO) are disposed on substrate
22
, preferably glass. Which supports a layer of continuous or discontinuous phosphor material
23
and which comprises anode
24
of the invention. Phosphor material
23
is capable of excitation by electrons. Upon applying a voltage from voltage source
26
, there results a high electric filed being applied to the emission sites of microstructured layer
12
. This causes a flow of electrons across low pressure gas or vacuum gap
28
between column conductors
18
and row conductors
16
.
FIG. 3
is another prior art example of a gated matrixed addressed field emission display device
30
. The device includes a gated cathode
32
which includes a conductive gate columns
34
, insulated spacers
36
, patterned microstructured layer
38
, deposited on and in electrical contact with row conductors
40
which are supported on substrate
41
, generally glass. Cathode
32
is spaced apart from anode
42
by low pressure gas or preferably vacuum gap
44
, the space between phosphor
50
and cathode
32
. Anode
42
includes substrate
46
on which is located a transparent phosphor containing layer
50
.
FIG. 4
shows a cross sectional view of a portion of a prior art carbon nanotube CRT display. The display in
FIG. 4
includes a gated cathode, a patterned microstructure layer consisting of carbon nanotube structures, insulated spacers, a patterned microstructure layer deposited on it and electrical contact with row conductors which are supported on the substrate. Cathode is spaced apart from an node structure by a low pressure vacuum. The anode comprises a faceplate, a conductor layer and phosphor which when bombarded with electrons emitted from the cathode excites the phosphor. The nanotube structure shown in
FIG. 4
typically includes a resistive layer between the cathode conductors and the microstructure emissive elements. The microstructure emissive elements and the resistive layer are typically constructed in a planar configuration.
FIG. 5
is another example of a carbon nano-tube field emission display device of the prior art. The field emitter of FIG.
5
,illustrates a multi-layer structure
300
which is a cross sectional view of a portion of an FED flat panel display. The multi-layer structure
100
comprises a field emission backplate structure
110
. An image is generated at faceplate structure
160
.
The backplate structure
110
generally comprises of a patterned emitter electrode
120
, a resistor layer
115
, an electrically insulating layer
140
, a gat

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