Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-04-14
1999-03-09
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257915, H01L 2348
Patent
active
058805265
ABSTRACT:
A barrier metal layer comprises a titanium film having a surface nitrided and modified by a nitrogen compound containing nitrogen atoms, and a titanium nitride film formed on a surface of the titanium film. The titanium film and titanium nitride film are interposed between a base layer, or a lower layer of a semiconductor device, and a metal film or an upper layer of the semiconductor device. A method of forming a barrier metal layer comprises the steps of forming a titanium film on an entire surface of an insulating layer including an inner wall of a hole, which hole is formed in a predetermined portion of the insulating layer to electrically connect a lower wiring layer and an upper wiring layer constituting a multilevel inter-connection structure of a semiconductor device, the upper wiring layer being provided on the insulating layer, the insulating layer being deposited on the lower wiring layer, the hole being formed to reach the lower wiring layer, and also forming the titanium film on a surface of the lower wiring layer exposed to a bottom of the hole, nitriding and modifying the titanium film by exposing the titanium film in an atmosphere of a nitrogen compound containing nitrogen atoms, and forming a titanium nitride film on the modified titanium film, the upper wiring layer being deposited on the titanium nitride layer.
Hatano Tatsuo
Murakami Seishi
Chaudhuri Olik
Kelley Nathan K.
Tokyo Electron Limited
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