Barrier metal film production method

Details Barrier metal film production method Barrier metal film production method

2007-05-17

2010-02-09

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S720000, C438S759000

Reexamination Certificate

active

07659209

ABSTRACT:
A Cl2gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

REFERENCES:
patent: 3979271 (1976-09-01), Noreika et al.
patent: 5228052 (1993-07-01), Kikuchi et al.
patent: 5522343 (1996-06-01), Kodama et al.
patent: 5614070 (1997-03-01), Moon
patent: 5685942 (1997-11-01), Ishii
patent: 5686355 (1997-11-01), Sumi et al.
patent: 5736196 (1998-04-01), Decker et al.
patent: 5753320 (1998-05-01), Mikoshiba et al.
patent: 5795831 (1998-08-01), Nakayama et al.
patent: 5855745 (1999-01-01), Manley
patent: 5972179 (1999-10-01), Chittipeddi et al.
patent: 5976986 (1999-11-01), Naeem et al.
patent: 6008136 (1999-12-01), Wada
patent: 6040012 (2000-03-01), Anderbouhr et al.
patent: 6045666 (2000-04-01), Satitpunwaycha et al.
patent: 6071572 (2000-06-01), Mosely et al.
patent: 6090702 (2000-07-01), Okamoto
patent: 6136095 (2000-10-01), Xu et al.
patent: 6153519 (2000-11-01), Jain et al.
patent: 6153530 (2000-11-01), Ye et al.
patent: 6162715 (2000-12-01), Mak et al.
patent: 6171661 (2001-01-01), Zheng et al.
patent: 6238739 (2001-05-01), Madar et al.
patent: 6265311 (2001-07-01), Hautala et al.
patent: 6271121 (2001-08-01), Webb
patent: 6271136 (2001-08-01), Shue et al.
patent: 6294469 (2001-09-01), Kulkarni et al.
patent: 6352049 (2002-03-01), Yin et al.
patent: 6440494 (2002-08-01), Arena-Foster
patent: 6455414 (2002-09-01), Hillman et al.
patent: 6472318 (2002-10-01), Ueno
patent: 6579806 (2003-06-01), Nallan et al.
patent: 6634313 (2003-10-01), Hanawa et al.
patent: 6641698 (2003-11-01), Kabansky
patent: 6749717 (2004-06-01), Sandhu et al.
patent: 6893953 (2005-05-01), Hoshino et al.
patent: 2002/0009872 (2002-01-01), Hoshino et al.
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 2003/0003757 (2003-01-01), Nallan et al.
patent: 2003/0199152 (2003-10-01), Derraa
patent: 0477990 (1992-04-01), None
patent: 0482265 (1992-04-01), None
patent: 0573348 (1993-12-01), None
patent: 0 658 926 (1995-06-01), None
patent: 0818559 (1998-01-01), None
patent: 0837155 (1998-04-01), None
patent: 0861921 (1998-09-01), None
patent: 1120474 (2001-08-01), None
patent: 1199378 (2002-04-01), None
patent: 1313127 (2003-05-01), None
patent: 1338674 (2003-08-01), None
patent: 1344842 (2003-09-01), None
patent: 2784694 (2000-04-01), None
patent: 2111534 (1983-07-01), None
patent: 7-142389 (1995-06-01), None
patent: 7-193025 (1995-07-01), None
patent: 8-124876 (1996-05-01), None
patent: 9-232313 (1997-09-01), None
patent: 10-209073 (1998-08-01), None
patent: 10-209280 (1998-08-01), None
patent: 2000-195948 (2000-07-01), None
patent: 2001-41802 (2001-02-01), None
patent: 2001-53077 (2001-02-01), None
patent: 2001-118804 (2001-04-01), None
patent: 2001-284285 (2001-10-01), None
patent: 2001-298028 (2001-10-01), None
Kim et al.,“Mechanical Properties and Oxidation Behavior of Ti-Si-N Films Prepared by Plasma-Assisted CVD,” Chemical Vapor Deposition, vol. 5, No. 6, pp. 275-279 (1999).
Reidel et al.,“MicroElectric Engineering”, vol. 5, No. 1-4, pp. 213-218 (2001).
Shew et al.,“Thin Solid Films”, vol. 293, No. 1-2, pp. 212-219 (1997).
Widmann et al., “Technologies Hochintegrierter Schaltungen”, pp. 181-222 (1996).
Yamada et al., “Journal of the Electrochemical Society”, vol. 138, No. 2, pp. 496-499 (1991).
Yanagisawa et al., “Damage-free Flattening Technology of Large Diameter Si Wafer Employing Numerically controlled Local SF6/H2 Downstream Plasma”, Microprocesses and Nanotechnology conference, 2000 International, pp. 274-275 (Jul. 11-13, 2000).

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