Fishing – trapping – and vermin destroying
Patent
1992-10-02
1993-08-24
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437192, 437194, 156643, H01L 2144
Patent
active
052388727
ABSTRACT:
The interconnect system of the present invention is comprised of a TiW metal barrier layer as well as a Ti metal barrier layer deposited on the silicon surface. An anisotropic etch process for the Ti/TiW/Al metal sandwich has also been developed without corrosion and metal residue. The addition of the Ti layer between the TiW layer and the silicon surface reduces the contact resistance between the metal and P.sup.+ silicon contact. This Ti layer also effectively improves the blocking of aluminum migration to the silicon surface through TiW grain boundaries. In order to realize good ohmic metal-P.sup.+ contacts, the surface concentration of the silicon should be very high. Therefore, the present invention also employs a plasma mode etch which removes about 250 .ANG. silicon since peak concentrations of P.sup.+ dopants (boron) are often found about 400 .ANG. below the silicon surface. This plasma mode etch will also remove silicon damage caused by previous etching. A detailed etching process is also developed in the present invention so as to avoid any corrosion or metal residue.
REFERENCES:
patent: 4658496 (1987-04-01), Beinvogl et al.
patent: 4727046 (1988-02-01), Tuntasood et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4829024 (1989-05-01), Klein et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 4994410 (1991-02-01), Sun et al.
patent: 5010026 (1991-04-01), Gomi
H. Ono et al., "Development of a Planarized Al-Si Contact Filling Technology", 1990 IEEE VMIC Conference, Jun. 12-13, 1990, pp. 76-81.
S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, Sunset Beach Calif., 1990, pp. 124-126.
N. Fujimura et al., "Solid Phase Reactions and Change in Stress of TiN/Ti/Si for a Diffusion Barrier," J. Appl. Phys., vol. 67, No. 6, Mar., 1990, pp. 2899-2903.
Y. Pauleau, "Interconnect Materials for VLSI Circuits," Solid State Technology, vol. 30, No. 4, Apr. 1987, pp. 155-162.
Hearn Brian E.
Holtzman Laura M.
Samsung Semiconductor Inc.
LandOfFree
Barrier metal contact architecture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Barrier metal contact architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier metal contact architecture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-828783