Barrier material formation in integrated circuit structures

Details Barrier material formation in integrated circuit structures Barrier material formation in integrated circuit structures

2005-05-25

2008-11-04

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S752000, C257S758000, C257SE23145

Reexamination Certificate

active

07446416

ABSTRACT:
A method of forming an electrically conductive via. A first electrically conductive layer is formed, and a second layer is formed on the first layer. The second layer has desired barrier layer properties. A third non electrically conductive layer is formed on the second layer. A via hole is etched through the third layer, thereby exposing a portion of the second layer at the bottom of the via hole. The exposed portion of the second layer at the bottom of the via hole is redistributed so that at least a portion of the second layer is removed from the bottom of the via hole and deposited on lower portions of the sidewalls of the via hole. A fourth electrically conductive layer is formed within the via hole to form the electrically conductive via.

REFERENCES:
patent: 6958542 (2005-10-01), Hasunuma et al.
patent: 7042093 (2006-05-01), Shimizu et al.
patent: 7061111 (2006-06-01), McTeer
patent: 7064056 (2006-06-01), Thei et al.
patent: 7122900 (2006-10-01), Takeda et al.
patent: 2004/0155340 (2004-08-01), Owada et al.
patent: 2004/0155349 (2004-08-01), Nakamura et al.
patent: 2005/0006776 (2005-01-01), Lin et al.
patent: 2005/0146034 (2005-07-01), Andreyushchenko et al.
patent: 2007/0029677 (2007-02-01), Kamoshima et al.

Affiliated with

Also associated with

Rating

Barrier material formation in integrated circuit structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Barrier material formation in integrated circuit structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier material formation in integrated circuit structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4038393