Barrier layers for microelectromechanical systems

Details Barrier layers for microelectromechanical systems Barrier layers for microelectromechanical systems

2006-11-21

2006-11-21

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257S418000, C438S021000

Reexamination Certificate

active

07138693

ABSTRACT:
A method for processing microelectromechanical devices is disclosed herein. The method prevents the diffusion and interaction between sacrificial layers and structure layers of the microelectromechanical devices by providing selected barrier layers between consecutive sacrificial and structure layers.

REFERENCES:
patent: 5835256 (1998-11-01), Huibers
patent: 6046840 (2000-04-01), Huibers
patent: 2002/0047172 (2002-04-01), Reid
X. Sun, et al., Reactively sputtered Ti-Si-N films I. Physical properties, 1997 American Institute of Physics, pp. 656-662.
Nicolet, et al., Highly metastable amorphous or near-amorphous ternary films (mictamict alloys), Microelectronic Engineering 55 , 2001, pp. 357-367.
Nicolet, Reactively sputtered ternary films of the type TM-Si-N and their properties (TM=early transition metal, Vacuum 59, 2000, pp. 716-720.

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