Barrier layers for ferroelectric and pzt dielectric on silicon

Details Barrier layers for ferroelectric and pzt dielectric on silicon Barrier layers for ferroelectric and pzt dielectric on silicon

1992-07-27

1993-02-16

Griffin, Donald

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

257295, 257306, 257310, H01L 2978, H01G 406

Patent

active

051876388

ABSTRACT:
The present invention introduces an effective way to produce a thin film capacitor utilizing a high dielectric constant material for the cell dielectric through the use of a single transition metal, such as Molybdenum, for a bottom plate electrode which oxidizes to form a highly conducting oxide. Using Molybdenum, for example, will make a low resistive contact to the underlying silicon since Molybdenum reacts with silicon to form MoSix with low (<500 .mu..OMEGA.-cm) bulk resistance. In addition, Mo/MoSix is compatible with present ULSI process flow or fabricating DRAMs and the like.

REFERENCES:
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5099305 (1992-03-01), Takenaka
patent: 5134451 (1992-07-01), Katoh
"A Stacked Capacitor With (Ba.sub.x Sr.sub.1-x) TiO.sub.3 For 256M Drams" by Koyama et al., IEDM 91', pp. 32.1.1-32.1.4.
"Structural And Electrical Evolution Of The Al/RuO.sub.2 Interface Upon Thermal Annealing" by Vu et al., Solid State Electronics, vol. 34, No. 3, pp. 271-278.

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