Barrier layer for photovoltaic devices

Details Barrier layer for photovoltaic devices Barrier layer for photovoltaic devices

1983-12-23

1985-07-30

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

29572, 136258, 136260, 357 30, H01L 3104

Patent

active

045323720

ABSTRACT:
An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a magnesium fluoride based material. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.

REFERENCES:
patent: 4251286 (1981-02-01), Barnett
patent: 4318938 (1982-03-01), Barnett et al.
patent: 4412091 (1983-10-01), Jordan et al.
patent: 4443653 (1984-04-01), Catalano et al.
Y. S. Tyon, "Preparation of Cadmium Sulfide Solar Cells", Research Disclosure, pp. 20-21 (1977).

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