Barrier layer for photovoltaic devices

Details Barrier layer for photovoltaic devices Barrier layer for photovoltaic devices

1983-07-28

1986-07-01

James, Andrew J.

357 2, 357 90, 357 58, 357 61, 357 16, 357 49, 357 54, H01L 2714

Patent

active

045983062

ABSTRACT:
An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a material chosen from the group consisting essentially of oxides, nitride and carbides of: indium, tin, cadmium, zinc, antimony, silicon, chromium and mixtures thereof. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.

REFERENCES:
patent: 2870342 (1959-01-01), Walker et al.
patent: 4069492 (1978-01-01), Pankove et al.
patent: 4117506 (1978-09-01), Carlson et al.
patent: 4119840 (1978-10-01), Nelson
patent: 4320249 (1982-03-01), Yamazaki
patent: 4387387 (1983-06-01), Yamazaki
patent: 4438446 (1984-03-01), Tsang

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