Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-08-07
1993-03-30
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257222, 257440, 257436, 257447, 257460, 257464, 257463, 257655, H01L 2978, H01L 2714, H01L 3100
Patent
active
051988810
ABSTRACT:
A surface electron barrier region is formed on a semiconductor membrane device by a single step laser process which produces a sharp doping profile in a surface region above the light penetration depth. Enhanced quantum efficiency is observed, and by selectively forming barrier layers of differing depth, a CCD device architecture for two-color sensitivity is achieved. The barrier layer results in enhanced membrane-type and radiation hardened bipolar and CMOS devices.
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Burke Barry E.
Ehrlich Daniel J.
Huang Jammy C.
Kosicki Bernard B.
Rothschild Mordechai
Carroll J.
Engellenner Thomas J.
Falkoff Michael I.
Massachusetts Institute of Technology
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