Barrier layer cladding around copper interconnect lines

Details Barrier layer cladding around copper interconnect lines Barrier layer cladding around copper interconnect lines

1995-12-26

2000-07-04

Potter, Roy

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257762, 257763, H01L 2348

Patent

active

060843020

ABSTRACT:
In a method for fabricating an integrated circuit interconnect upon a semiconductor substrate an integrated circuit component is formed upon the surface of the semiconductor substrate. A copper interconnect is formed and electrically coupled to the integrated circuit component. A metal is introduced in the copper interconnect to provide an introduced metal. A gas is reacted with the implanted metal to form a barrier layer cladding upon the copper interconnect. The metal is introduced substantially near the surface of the copper interconnect and substantially all of the introduced metal diffuses to the surface and reacts with the gas. Thus the resistivity of the introduced interconnect is substantially equal to the resistivity of copper. The metal can be, for example, titanium, tantalum, chromium, aluminium or tungsten. The gas can contain, for example, nitrogen, oxygen and carbon.

REFERENCES:
patent: 4910169 (1990-03-01), Hoshino
patent: 5130274 (1992-07-01), Harper et al.
patent: 5818109 (1998-10-01), Satake

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