Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-02-08
1990-03-13
Robinson, Ellis P.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505704, 428209, 428332, 428333, 428334, 428446, 428448, 428457, 428469, 428901, 428341, 428472, 174256, 361397, B32B 900
Patent
active
049083481
ABSTRACT:
A barrier layer triad intended to protect a silicon substrate and an overlying conductive layer from mutual contamination is disclosed as well as a process for its preparation. The barrier layer triad is comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of at least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.
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Agostinelli John A.
Hung Liang-Sun
Eastman Kodak Company
Robinson Ellis P.
Ryan P. J.
Thomas Carl O.
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