Barrier height voltage reference

Details Barrier height voltage reference Barrier height voltage reference

1976-04-07

1978-01-10

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 323 22T, 357 15, 357 16, 357 22, 357 41, H03K 112, H03K 3353, H01L 2980, H01L 2702

Patent

active

040681343

ABSTRACT:
A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the two field effect transistors produces a voltage reference which is substantially independent of operating point, supply potential, and temperature.

REFERENCES:
patent: 3870906 (1975-03-01), Hughes
patent: 3975648 (1976-08-01), Tobey et al.
Machattie, "A Highly Stable Current or Voltage Source", J. of Physics E; Scientific Instruments (GB) vol. 5 (10/72) pp. 1016-1017.
Hart, "Voltage Reference Sources", Electronics Components, vol. 11 (6/70) pp. 665-666.
Geppert, et al. "Correlation of Metal-Semiconductor Barrier Height and Metal Work Function. . ." J. Applied Physics, vol. 37, (5/66) pp. 2458-2465.

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