Barrier height voltage reference

Details Barrier height voltage reference Barrier height voltage reference

1977-10-03

1979-10-16

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, B01J 1700

Patent

active

041708180

ABSTRACT:
A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the two field effect transistors produces a voltage reference which is substantially independent of operating point, supply potential, and temperature.

REFERENCES:
patent: 3767984 (1973-10-01), Shinoda
patent: 3906540 (1975-09-01), Hollins
patent: 3907617 (1975-09-01), Zwernemann

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