Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-05-13
2008-05-13
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S764000, C257S767000, C257S770000, C257SE23163
Reexamination Certificate
active
07372160
ABSTRACT:
A protective barrier layer, formed of a material such as titanium or titanium nitride for which removal by chemical mechanical polishing (CMP) is primarily mechanical rather than primarily chemical, formed on a conformal tungsten layer. During subsequent CMP to pattern the tungsten layer, upper topological regions of the protective barrier layer (such as those overlying interlevel dielectric regions) are removed first, exposing the tungsten under those regions to removal, while protective barrier layer regions over lower topological regions (such as openings within the interlevel dielectric) remain to prevent chemical attack of underlying tungsten. CMP patterned tungsten is thus substantially planar with the interlevel dielectric without dishing, even in large area tungsten structures such as MOS capacitor structures.
REFERENCES:
patent: 5614437 (1997-03-01), Choudhury
patent: 5618381 (1997-04-01), Doan et al.
patent: 5889328 (1999-03-01), Joshi et al.
patent: 6054383 (2000-04-01), Suzuki et al.
patent: 6060787 (2000-05-01), Zhao et al.
patent: 6096632 (2000-08-01), Drynan
patent: 6103625 (2000-08-01), Marcyk et al.
patent: 6169028 (2001-01-01), Wang et al.
patent: 6175154 (2001-01-01), Gillespie
patent: 6346741 (2002-02-01), Van Buskirk et al.
patent: 6436814 (2002-08-01), Horak et al.
patent: 6492260 (2002-12-01), Kim et al.
Database WPI, Section Ch. Week 200116, Derwent Publications Ltd., London, GB; An 2001-156149, XP 002260086 & KR 2000 037 768A (Samsung Electronics Co. LTD), Jul. 5, 2000, abstract.
Gandy Todd H.
Nickell Rebecca A.
Spinner III Charles R.
Jorgenson Lisa K.
Munck William A.
STMicroelectronics Inc.
Warren Matthew E.
LandOfFree
Barrier film deposition over metal for reduction in metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Barrier film deposition over metal for reduction in metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier film deposition over metal for reduction in metal... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2771865