Barium titanate-based semiconductor ceramic

Details Barium titanate-based semiconductor ceramic Barium titanate-based semiconductor ceramic

1999-05-05

2000-06-06

Brunsman, David

Compositions: ceramic

Ceramic compositions

Titanate, zirconate, stannate, niobate, or tantalate or...

501138, 501139, C04B 35468

Patent

active

060718420

ABSTRACT:
A barium titanate-based semiconducting ceramic, which contains BaTiO.sub.3 as a main component thereof, and Ba.sub.2 TiSi.sub.2 O.sub.8 and Ba.sub.n Ti.sub.m O.sub.n+2m (1.ltoreq.n.ltoreq.4, 2.ltoreq.m.ltoreq.13, n.ltoreq.m), respectively, as trace-phase compositions, wherein the ratio of the contents of about Ba.sub.2 TiSi.sub.2 O.sub.8 and Ba.sub.n Ti.sub.m O.sub.n+2m (Ba.sub.2 TiSi.sub.2 O.sub.8 /Ba.sub.n Ti.sub.m O.sub.n+2m) as the trace-phase compositions is in the range of about 0.5 to 80.0. This semiconductive ceramic exhibits excellent voltage resistance and ensures high reliability as a product element. Moreover, it has a suitable room temperature resistivity .rho.25 for functioning as a product element.

REFERENCES:
CAPLUS 1999:490419 Goto, "Barium titanate-based . . . ".
CAPLUS 1988:521008 Yamamoto, "Barium titanate-type . . . ", 1999.

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