Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Patent
1994-09-30
1995-09-26
Reynolds, Bruce A.
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
501139, H01G 412
Patent
active
054539080
ABSTRACT:
A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of holmium dopant (0.5 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Apparently, properties of the thin film deposition and small grain size, including temperatures well below bulk BST sintering temperatures, allow the film to support markedly higher defect concentrations without holmium precipitation than are observed for bulk BST. For holmium doping levels generally between 0.5 and 5% (compensated with titanium and/or manganese), better than 50% improvement in dielectric constant and two to six orders of magnitude reduction in leakage current (compared to undoped BST) have been observed for such films.
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I. K. Yoo, S. B. Sesu, and J. Xing, Mat. Res. Soc. Symp. Proc. vol. 310 (1993).
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Kulwicki Bernard M.
Tsu Robert
Donaldson Richard A.
Hiller Willieam E.
Reynolds Bruce A.
Stoltz Richard A.
Switzer Michael D.
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