Barium aluminoborosilicate glass-ceramics for semiconductor dopi

Details Barium aluminoborosilicate glass-ceramics for semiconductor dopi Barium aluminoborosilicate glass-ceramics for semiconductor dopi

1975-12-19

1976-12-21

Ozaki, G.

Metal treatment

Compositions

148186, 148188, 148189, 106 396, 106 397, 106 54, 252950, 252951, H01L 21223

Patent

active

039986675

ABSTRACT:
Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of over 40 and up to 60 SiO.sub.2, 10 to 30 Al.sub.2 O.sub.3, 20 to 40 B.sub.2 O.sub.3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO wherein the ratio of Al.sub.2 O.sub.3 to alkaline earth oxides is from 1.5 to 4.

REFERENCES:
patent: 3907618 (1975-09-01), Rapp
patent: 3920882 (1975-11-01), Venkatu
patent: 3923563 (1975-12-01), Venkatu
patent: 3928096 (1975-12-01), Vergano et al.

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