Barium aluminoborosilicate glass-ceramics for semiconductor dopi

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148186, 148188, H01L 736

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active

039620000

ABSTRACT:
Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B.sub.2 O.sub.3 from a solid B.sub.2 O.sub.3 source to the semiconductor, wherein the solid B.sub.2 O.sub.3 source comprises a rigid, dimensionally stable, glass-ceramic body formed from certain barium aluminoborosilicate parent glass compositions which in mole percent consist essentially of over 40 and up to 60 SiO.sub.2, 10 to 30 Al.sub.2 O.sub.3, 20 to 40 B.sub.2 O.sub.3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO.

REFERENCES:
patent: 3314833 (1967-04-01), Arndt et al.
patent: 3518510 (1970-06-01), Lamming
patent: 3530016 (1970-09-01), Joseph
patent: 3540895 (1970-11-01), Scheidler et al.
patent: 3540951 (1970-11-01), Pammer et al.
patent: 3852128 (1974-12-01), Kreuzer

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