Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-09-12
2010-02-23
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C438S030000
Reexamination Certificate
active
07667232
ABSTRACT:
A bank structure in which a recess corresponding to a pattern formed of a functional liquid is provided includes first recess provided corresponding to a first pattern, and a second recess provided on part of the first recess and corresponding to a second pattern. The second recess has a shape that has a width larger than a width of the first recess and has a circular arc in at least part of an outer circumference of the second recess.
REFERENCES:
patent: 6300683 (2001-10-01), Nagasaka et al.
patent: A 11-274671 (1999-10-01), None
patent: A 2000-216330 (2000-08-01), None
patent: A-2004-022898 (2004-01-01), None
patent: A-2005-032835 (2005-02-01), None
Hirai Toshimitsu
Sakai Shinri
Oliff & Berridg,e PLC
Seiko Epson Corporation
Vu Hung
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