Bandgap voltage reference using bipolar parasitic transistors an

Details Bandgap voltage reference using bipolar parasitic transistors an Bandgap voltage reference using bipolar parasitic transistors an

1989-11-17

1992-07-21

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307491, 307495, 307310, 323315, 323316, H03K 301, G06G 710

Patent

active

051325560

ABSTRACT:
In a CMOS bandgap reference circuit, the respective collectors of two lateral parasitic NPN transistors are connected to the two nodes of a current mirror. The emitter circuit of the first parasitic NPN transistor includes a resistor, whereby the base-emitter junction current densities of the parasitic NPN transistors are maintained at a preselected ratio. A second resistor common to the emitter circuit of both parasitic NPN transistors is provided, whereby .DELTA.V.sub.BE having a positive temperature coefficient and V.sub.BE of the second parasitic NPN transistor having a negative temperature coefficient cancel one another. The temperature independent voltage across the common resistor and the base-emitter junction of the second transistor is buffered by a unity gain amplifier. The output of the unity gain amplifier is used to drive the parasitic NPN transistors and also is furnished as the reference voltage.

REFERENCES:
patent: 3586987 (1971-06-01), Fullagar
patent: 3976896 (1976-08-01), Ryder
patent: 4263519 (1981-04-01), Schade, Jr.
patent: 4317054 (1982-02-01), Caruso et al.
patent: 4349778 (1982-09-01), Davis
patent: 4375595 (1983-03-01), Ulmer et al.
patent: 4571507 (1986-02-01), Collings
patent: 4577119 (1986-03-01), Kim et al.
patent: 4588941 (1986-05-01), Kerth et al.
patent: 4751454 (1988-06-01), Dielacher et al.
P. Horowitz et al., "The Art of Electronics," Cambridge University Press, Cambridge, 1986, p. 65.
J. Millman et al., "Integrated Electronics: Analog and Digital Circuits and Systems", McGraw-Hill Book Company, New York, 1972, p. 39.
Degrauwe et al., "CMOS voltage references using lateral bipolar transistors," in IEEE Journal of Solid State Circuits, vol. SC-20, No. 67, Dec. 1985, pp. 1151-1157.

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