Bandgap voltage reference including a process and temperature in

Details Bandgap voltage reference including a process and temperature in Bandgap voltage reference including a process and temperature in

1988-09-22

1989-08-15

Wong, Peter S.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323901, G05F 316

Patent

active

048578231

ABSTRACT:
A bandgap voltage reference start-up circuit configured to initiate bandgap reference operation over an extended temperature range while being relatively insensitive to the effects of fabrication process variables. The circuit as preferably implemented includes a differential amplifier in the bandgap voltage reference stage which controls the source of current to contrasted bipolar devices situated in parallel paths. A comparator monitors the activities of the current source drive signal and compares that to an internally generated reference, which reference is configured to the matched in temperature and process variable effect the corresponding bandgap reference bipolar device and the current source device. During start-up the comparator initiates an injection of current into one bipolar device of the bandgap reference circuit to drive the bandgap loop into the appropriate of two potential operating states. The preferred embodiment also includes a power-down mode capability.

REFERENCES:
patent: 3648154 (1972-03-01), Frederiksen et al.
patent: 3886435 (1975-05-01), Steckler
patent: 4085359 (1978-04-01), Ahmed
patent: 4419594 (1983-12-01), Gemmell et al.
patent: 4588941 (1986-05-01), Kerth et al.
patent: 4618816 (1198-10-01), Monticelli
Michejda et al., "A Precision CMOS Bandgap Reference", IEEE Journal of Solid State Circuits, Dec. 1984, pp. 1014-1021.
Song et al., "A Precision Curvature-Compensated CMOS Bandgap Reference", IEEE Journal of Solid State Circuits, Dec. 1983, pp. 634-643.

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