Bandgap tuning of semiconductor quantum well structures

Fishing – trapping – and vermin destroying

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437105, 437107, 437129, 437133, 257 12, 257 14, 257 15, 372 7, 372 43, H01L 2120, H01L 21203

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052388689

ABSTRACT:
A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. The tuning is spatially selective when the heterostructure is masked so that exposed portions correspond to regions where bandgap tuning is desirable. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

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