Bandgap reference voltage generator with a low-cost,...

Details Bandgap reference voltage generator with a low-cost,... Bandgap reference voltage generator with a low-cost,...

2005-12-06

2005-12-06

Laxton, Gary L (Department: 2838)

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

C323S314000

Reexamination Certificate

active

06972550

ABSTRACT:
A bandgap voltage reference generator includes a bandgap voltage reference circuit and a fast startup circuit. The fast start-up circuit, which is cost-efficient and saves power consumption, can rapidly start up the bandgap reference voltage circuit coupled thereto. The fast start-up circuit comprises a P-channel MOSFET or an N-channel MOSFET. Upon the bandgap voltage reference generator being powered by an external DC voltage, the bandgap reference generator will possibly operate in the power-down operating state. At this time there exists a large voltage drop between the gate and the source of the P-channel MOSFET (or N-channel MOSFET), and thus a large current flows rapidly through the P-channel MOSFET (or N-channel MOSFET). Voltages of drains of two specific MOSFETs in the bandgap voltage reference circuit will thus be pulled to be substantially the same, and the bandgap voltage reference circuit is brought into a normal operating state. The output of the bandgap reference generator is then very close to the bandgap voltage of silicon.

REFERENCES:
patent: 4371843 (1983-02-01), Fang et al.
patent: 6016050 (2000-01-01), Brokaw
patent: 6356064 (2002-03-01), Tonda

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