Bandgap reference voltage generating circuit

Details Bandgap reference voltage generating circuit Bandgap reference voltage generating circuit

1999-06-04

2000-07-04

Nguyen, Matthew

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323313, G05F 316

Patent

active

060843918

ABSTRACT:
In a bandgap reference voltage generating circuit having first, second and third unitary circuits connected in parallel between a power supply voltage and a ground, there is added a fourth unitary circuit including an n-channel FET turned on in response to a bias voltage applied to a gate of the n-channel FET. The second unitary circuit is connected to the fourth unitary circuit through a capacitor having one end connected to a drain of the n-channel FET. When the bias voltage is applied to turn on the n-channel FET of the fourth unitary circuit, since the potential of the one end of the capacitor is dropped, a gate potential of n-channel FETs included in the first and second unitary circuits and operating in a weak inversion condition quickly becomes definite, so that a reference voltage can be generated quickly.

REFERENCES:
patent: 4342926 (1982-08-01), Whatley
patent: 4714901 (1987-12-01), Jain et al.
patent: 5223743 (1993-06-01), Nakagawara
patent: 5856749 (1999-01-01), Wu

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