Bandgap reference designs with stacked diodes, integrated...

Details Bandgap reference designs with stacked diodes, integrated... Bandgap reference designs with stacked diodes, integrated...

2007-08-07

2007-08-07

Han, Jessica (Department: 2838)

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

C323S314000, C327S539000

Reexamination Certificate

active

11129969

ABSTRACT:
The performance of a bandgap reference circuit is improved by increasing the ΔVBE, and thereby correspondingly decreasing the input sensitivity of the error amplifier in the control loop. The ΔVBE can be increased by presenting stacked diode configurations at the amplifier inputs, by increasing the diode ratio presented at the amplifier inputs, and by providing a higher current in the CTAT leg than in the PTAT leg. The stacked diode configuration is achieved by producing isolated diodes with a triple well CMOS process. The stacked diode configuration and the triple well CMOS process also permit the input stage of the amplifier to use N-channel transistors operating in the threshold region.

REFERENCES:
patent: 6052020 (2000-04-01), Doyle
patent: 6075407 (2000-06-01), Doyle
patent: 6281743 (2001-08-01), Doyle
patent: 6462612 (2002-10-01), Roh et al.
patent: 6507179 (2003-01-01), Jun et al.

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