Bandgap reference

Details Bandgap reference Bandgap reference

1979-06-28

1981-04-21

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307310, 323314, 330261, H03K 301, H01L 3100, G05F 140

Patent

active

042635195

ABSTRACT:
A voltage reference circuit that can use the parasitic bipolar transistors formed by the drain regions, p-well and monolithic substrate of CMOS integrated circuits.
First and second common-collector amplifier transistors are arranged to maintain their base-emitter junction current densities in a prescribed ratio. The difference in current density creates a difference in base-emitter potential used to generate a current having a positive temperature coefficient. This current conducted in a resistor connected to the emitter of the first transistor generates a potential having a positive temperature coefficient. The potential across the first resistor in the emitter circuit of the first transistor is summed with the base-emitter potential of the first transistor producing a reference voltage substantially independent of temperature.

REFERENCES:
patent: 3887863 (1975-06-01), Brokaw
patent: 3976896 (1976-08-01), Ryder
patent: 4068134 (1978-01-01), Tobey, Jr. et al.
patent: 4071813 (1978-01-01), Dobkin
patent: 4087758 (1978-05-01), Hareyama

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