Bandgap isolated light emitter

Details Bandgap isolated light emitter Bandgap isolated light emitter

1997-12-12

2000-05-16

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 45, 372 47, 372 44, 372 50, H01S 319

Patent

active

060646837

ABSTRACT:
A light emitting device having a first mirror, an active layer, a second mirror, and a beryllium implantation resulting in a peripheral boundary of a waveguide through the first and second mirrors, the active layer and the trapping layer. A P-N junction is situated within the implantation and the guide. The turn on voltage is lower for the junction within the waveguide than that within the implantation, resulting in confinement of current within the guide at a voltage applied to the device that is greater than the lower junction voltage and less than the higher junction voltage. The device also has an electron trapping layer between said first mirror and said active layer, and a conduction layer situated on said second mirror.

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