Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-07-31
2008-09-16
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C257S411000, C257S314000
Reexamination Certificate
active
07426140
ABSTRACT:
Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a hole-tunneling barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays and methods of operation.
REFERENCES:
patent: 4630086 (1986-12-01), Sato et al.
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5270969 (1993-12-01), Iwahashi et al.
patent: 5278439 (1994-01-01), Ma et al.
patent: 5286994 (1994-02-01), Ozawa et al.
patent: 5319229 (1994-06-01), Shimoji et al.
patent: 5355464 (1994-10-01), Fandrich et al.
patent: 5408115 (1995-04-01), Chang
patent: 5412603 (1995-05-01), Schreck et al.
patent: 5424569 (1995-06-01), Prall
patent: 5448517 (1995-09-01), Iwahashi et al.
patent: 5483486 (1996-01-01), Javanifard et al.
patent: 5485422 (1996-01-01), Bauer et al.
patent: 5509134 (1996-04-01), Fandrich et al.
patent: 5515324 (1996-05-01), Tanaka et al.
patent: 5566120 (1996-10-01), D'Souza
patent: 5602775 (1997-02-01), Vo
patent: 5644533 (1997-07-01), Lancaster et al.
patent: 5694356 (1997-12-01), Wong et al.
patent: 5745410 (1998-04-01), Yiu et al.
patent: 5753950 (1998-05-01), Kojima et al.
patent: 5768192 (1998-06-01), Eitan
patent: RE35838 (1998-07-01), Momodomi et al.
patent: 5877054 (1999-03-01), Yamauchi et al.
patent: 5895949 (1999-04-01), Endoh et al.
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 5966603 (1999-10-01), Eitan et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6026026 (2000-02-01), Chan et al.
patent: 6034896 (2000-03-01), Ranaweera et al.
patent: 6074917 (2000-06-01), Chang et al.
patent: 6096603 (2000-08-01), Chang et al.
patent: 6151248 (2000-11-01), Harari et al.
patent: 6169693 (2001-01-01), Chan et al.
patent: 6172907 (2001-01-01), Jenne
patent: 6194272 (2001-02-01), Sung et al.
patent: 6215148 (2001-04-01), Eitan et al.
patent: 6218700 (2001-04-01), Papadas
patent: 6219276 (2001-04-01), Parker
patent: 6297096 (2001-10-01), Boaz et al.
patent: 6320786 (2001-11-01), Chang et al.
patent: 6356478 (2002-03-01), McCollum
patent: 6363013 (2002-03-01), Lu et al.
patent: 6396741 (2002-05-01), Bloom et al.
patent: 6436768 (2002-08-01), Yang et al.
patent: 6458642 (2002-10-01), Yeh et al.
patent: 6487114 (2002-11-01), Jong et al.
patent: 6512696 (2003-01-01), Fan et al.
patent: 6522585 (2003-02-01), Pasternak
patent: 6538923 (2003-03-01), Parker
patent: 6552386 (2003-04-01), Wu et al.
patent: 6566699 (2003-05-01), Eitan et al.
patent: 6587903 (2003-07-01), Roohparvar
patent: 6614070 (2003-09-01), Hirose et al.
patent: 6614694 (2003-09-01), Yeh et al.
patent: 6643181 (2003-11-01), Sofer et al.
patent: 6643185 (2003-11-01), Wang et al.
patent: 6645813 (2003-11-01), Hsieh et al.
patent: 6646924 (2003-11-01), Tsai et al.
patent: 6657252 (2003-12-01), Fried et al.
patent: 6657894 (2003-12-01), Yeh et al.
patent: 6670240 (2003-12-01), Ogura et al.
patent: 6670671 (2003-12-01), Sasago et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6677200 (2004-01-01), Lee et al.
patent: 6690601 (2004-02-01), Yeh et al.
patent: 6709928 (2004-03-01), Jenne et al.
patent: 6714457 (2004-03-01), Hsu et al.
patent: 6720630 (2004-04-01), Mandelman et al.
patent: 6744105 (2004-06-01), Chen et al.
patent: 6784480 (2004-08-01), Bhattacharyya
patent: 6795357 (2004-09-01), Liu et al.
patent: 6798012 (2004-09-01), Ma et al.
patent: 6815805 (2004-11-01), Weimer
patent: 6818558 (2004-11-01), Rathor et al.
patent: 6829175 (2004-12-01), Tsai et al.
patent: 6856551 (2005-02-01), Mokhlesi et al.
patent: 6858906 (2005-02-01), Lee et al.
patent: 6881994 (2005-04-01), Lee et al.
patent: 6885044 (2005-04-01), Ding
patent: 6897533 (2005-05-01), Yang et al.
patent: 6912163 (2005-06-01), Zheng et al.
patent: 6925007 (2005-08-01), Harari et al.
patent: 6933555 (2005-08-01), Hsieh et al.
patent: 6937511 (2005-08-01), Hsu et al.
patent: 6970383 (2005-11-01), Han et al.
patent: 6977201 (2005-12-01), Jung et al.
patent: 6995424 (2006-02-01), Lee et al.
patent: 6996011 (2006-02-01), Yeh et al.
patent: 7005366 (2006-02-01), Chau et al.
patent: 7012297 (2006-03-01), Bhattacharyya
patent: 7018895 (2006-03-01), Ding
patent: 7026682 (2006-04-01), Chung et al.
patent: 7071061 (2006-07-01), Pittikoun et al.
patent: 7075828 (2006-07-01), Lue et al.
patent: 7106625 (2006-09-01), Yeh et al.
patent: 7115469 (2006-10-01), Halliyal et al.
patent: 7115942 (2006-10-01), Wang
patent: 7120059 (2006-10-01), Yeh et al.
patent: 7133313 (2006-11-01), Shih
patent: 7151692 (2006-12-01), Wu
patent: 7154143 (2006-12-01), Jung
patent: 7158420 (2007-01-01), Lung
patent: 7164603 (2007-01-01), Shih et al.
patent: 7166513 (2007-01-01), Hsu et al.
patent: 7187590 (2007-03-01), Zous et al.
patent: 7190614 (2007-03-01), Wu
patent: 7209386 (2007-04-01), Yeh et al.
patent: 7209390 (2007-04-01), Lue et al.
patent: 7279740 (2007-10-01), Bhattacharyya et al.
patent: 2001/0012663 (2001-08-01), Magri' et al.
patent: 2002/0167844 (2002-11-01), Han et al.
patent: 2002/0179958 (2002-12-01), Kim
patent: 2003/0025147 (2003-02-01), Nomoto et al.
patent: 2003/0030100 (2003-02-01), Lee et al.
patent: 2003/0036250 (2003-02-01), Lin et al.
patent: 2003/0067032 (2003-04-01), Capara et al.
patent: 2003/0146465 (2003-08-01), Wu
patent: 2003/0185055 (2003-10-01), Yeh et al.
patent: 2003/0224564 (2003-12-01), Kang et al.
patent: 2004/0079983 (2004-04-01), Chae et al.
patent: 2004/0084714 (2004-05-01), Ishii et al.
patent: 2004/0125629 (2004-07-01), Schueuerlein et al.
patent: 2004/0145024 (2004-07-01), Chen et al.
patent: 2004/0183126 (2004-09-01), Bae et al.
patent: 2004/0256679 (2004-12-01), Hu
patent: 2005/0001258 (2005-01-01), Forbes
patent: 2005/0006696 (2005-01-01), Noguchi et al.
patent: 2005/0023603 (2005-02-01), Eldridge et al.
patent: 2005/0062091 (2005-03-01), Ding
patent: 2005/0074937 (2005-04-01), Jung
patent: 2005/0218522 (2005-10-01), Nomoto et al.
patent: 2005/0219906 (2005-10-01), Wu
patent: 2005/0237801 (2005-10-01), Shih
patent: 2005/0237809 (2005-10-01), Shih et al.
patent: 2005/0237813 (2005-10-01), Zous et al.
patent: 2005/0237815 (2005-10-01), Lue et al.
patent: 2005/0237816 (2005-10-01), Lue et al.
patent: 2005/0255652 (2005-11-01), Nomoto et al.
patent: 2005/0270849 (2005-12-01), Lue
patent: 2005/0281085 (2005-12-01), Wu
patent: 2006/0007732 (2006-01-01), Yeh
patent: 2006/0044872 (2006-03-01), Nazarian
patent: 2006/0088983 (2006-04-01), Fujisawa et al.
patent: 2006/0197145 (2006-09-01), Pittikoun et al.
patent: 2006/0198189 (2006-09-01), Lue et al.
patent: 2006/0202252 (2006-09-01), Wang et al.
patent: 2006/0202256 (2006-09-01), Harari
patent: 2006/0202261 (2006-09-01), Lue et al.
patent: 2006/0234446 (2006-10-01), Wei et al.
patent: 2006/0261401 (2006-11-01), Bhattacharyya
patent: 2006/0275986 (2006-12-01), Kobayashi et al.
patent: 2006/0281260 (2006-12-01), Lue
patent: 2007/0012988 (2007-01-01), Bhattacharyya
patent: 2007/0029625 (2007-02-01), Lue et al.
patent: 2007/0031999 (2007-02-01), Ho et al.
patent: 2007/0032018 (2007-02-01), Tuntasood et al.
patent: 2007/0045718 (2007-03-01), Bhattacharyya
patent: 2007/0069283 (2007-03-01), Shih et al.
patent: 2007/0076477 (2007-04-01), Hwang et al.
patent: 2007/0138539 (2007-06-01), Wu et al.
patent: 0016246 (1980-10-01), None
patent: 1411555 (2006-11-01), None
patent: 09162313 (1997-06-01), None
patent: 11040682 (1999-02-01), None
patent: 11233653 (1999-08-01), None
patent: 2004-363329 (2004-12-01), None
patent: WO-9428551 (1994-12-01), None
Cho et al., “Simultaneous Hot-Hole Injection at Drain and Source for Efficient Erase and Excellent Endurance in SONOS Flash EEPROM Cells,” IEEE Electron Device Letters 24(4) Apr. 2003 260-262.
Lue et al., U.S. Appl. No. 11/756,557 entitled “Cylindrical Channel Charge Trapping Devices With Effectively High Coupling Ratios,” filed May
Dinh Son
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
LandOfFree
Bandgap engineered split gate memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bandgap engineered split gate memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bandgap engineered split gate memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3989851