Bandgap control in amorphous semiconductors

Details Bandgap control in amorphous semiconductors Bandgap control in amorphous semiconductors

1982-01-07

1984-11-27

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

148174, 427 86, 427 87, 427 93, H01L 21205

Patent

active

044851286

ABSTRACT:
Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate using a hot-wall epitaxial reactor.

REFERENCES:
patent: 4237150 (1980-12-01), Wiesmann
patent: 4237151 (1980-12-01), Strongin
patent: 4339470 (1982-07-01), Carlson
patent: 4357179 (1982-11-01), Adams
Scott et al., "Deposition of a-Si:H by Homogeneous CVD" Journal De Physique, Collogque C4, supplanent au n.degree./0, Tome 42, Oct. 1981.

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