Bandgap control in amorphous semiconductors

Details Bandgap control in amorphous semiconductors Bandgap control in amorphous semiconductors

1981-11-20

1984-08-14

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 87, 427 95, H01L 21205

Patent

active

044657064

ABSTRACT:
Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate.

REFERENCES:
patent: 4237150 (1980-12-01), Wiesmann
patent: 4237151 (1980-12-01), Strongin
patent: 4339470 (1982-07-01), Carlson
patent: 4357179 (1982-11-01), Adams
Scott et al., "Deposition of a-Si:H by Homogeneous CVD", Journal De Physique, Colloque C4, Supplement au No. 10, Tome 42, Oct. 1981.

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