Band-to-band resonant tunneling transistor

Details Band-to-band resonant tunneling transistor Band-to-band resonant tunneling transistor

1994-03-11

1996-02-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257 25, 257197, H01L 2712

Patent

active

054897858

ABSTRACT:
A band-to-band resonant tunneling transistor including GaSb and InAs resonant tunneling layers separated by a thin barrier layer and a second InAs layer separated from the GaSb layer by another thin barrier layer. A terminal on the InAs resonant tunneling layer and a terminal on the second InAs layer. Leakage current reduction layers are positioned on the second InAs layer with a bias terminal positioned thereon. The InAs resonant tunneling layer has a plurality of quantized states which are misaligned with the ground state of the GaSb layer in a quiescent state, each of the quantized states of the InAs resonant tunneling layer are movable into alignment with the ground state of the GaSb layer to provide current flow through the transistor with the application of a specific potential to the terminal on the second InAs layer.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 5113231 (1992-05-01), Soderstrom et al.
patent: 5289014 (1994-02-01), Goronkin et al.
patent: 5349202 (1994-09-01), Uemura
patent: 5414274 (1995-05-01), Goronkin et al.
Longenbach et al., "Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures," Applied Physics Letters, 57(15), Oct. 1990, pp. 1554-1556.
Collins et al., "Experimental observation of large room-temperature current gains in a Stark effect transistor," Applied Physics Letters, 58(15), Apr. 1991, pp. 1673-1675.

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