Band reflection type FET dielectric resonator oscillator

Details Band reflection type FET dielectric resonator oscillator Band reflection type FET dielectric resonator oscillator

1986-05-16

1987-12-15

Grimm, Siegfried H.

Oscillators

Solid state active element oscillator

Transistors

331117FE, H03B 518

Patent

active

047136324

ABSTRACT:
A band reflection type oscillator includes a GaAs-FET having a source, a gate and a drain in which the drain is connected to ground. A stripline is connected to the gate, and a dielectric resonator is provided adjacent the stripline in a magnetically coupled relationship therewith. A stripline stub is electrically connected to the drain and positioned adjacent the resonator in a magnetically coupled relationship therewith, thereby defining a positive feedback circuit through the drain, said stripline stub, the resonator and the stripline to the gate. By the positive feedback circuit, the oscillation stability is improved.

REFERENCES:
patent: 4135168 (1979-01-01), Wade
patent: 4357582 (1982-11-01), Ishihara et al.
patent: 4435688 (1984-03-01), Shinkawa et al.
Ishihara et al, IEEE Transactions on Microwave Theory and Techniques, vol. MTT-28, No. 8, Aug. 1980, pp. 817-824.
Mori et al, IEEE International Microwave Symposium Digest, Washington, D.C., May 28-30, 1980, pp. 376-378.
"Transistor Technique", vol. 3, Mar. 1982, Design Techniques in a Recent Ultrahigh Frequency Circuit, pp. 323-335.

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