Band-gap voltage reference

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C327S540000

Reexamination Certificate

active

06906956

ABSTRACT:
An improved band-gap voltage reference apparatus and method is detailed that incorporates an amplifier to provide for improved compensation and temperature stability to the voltage reference circuit by increasing the effective hFE(also called β) of the bipolar junction transistors (BJTs) used in the band-gap voltage reference circuit. This also allows the band-gap voltage reference circuit to operated with a lower overall power usage and with lower supply voltages. Additionally, the improved band-gap voltage reference apparatus and method also allows for band-gap voltage references to be implemented in integrated circuit technologies that do not have high quality BJTs natively available in the manufacturing process of the technology.

REFERENCES:
patent: 4349778 (1982-09-01), Davis
patent: 5027053 (1991-06-01), Ohri
patent: 5049966 (1991-09-01), Wald
patent: 5384739 (1995-01-01), Keeth
patent: 5481179 (1996-01-01), Keeth
patent: 5839060 (1998-11-01), Kasperkovitz et al.
patent: 6316995 (2001-11-01), Chen et al.

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