Band-gap reference voltage source

Details Band-gap reference voltage source Band-gap reference voltage source

1997-11-03

1999-08-24

Wong, Peter S.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323315, G05F 316

Patent

active

059428872

ABSTRACT:
A band-gap reference voltage source comprises a first current branch including a first field effect transistor (T1); a second current branch including a second field effect transistor (T2); a reference resistor (RRF) arranged in series with one of the field effect transistors (T1, T2); and a voltage level shifter for coupling the backgates (BG1, BG2) of the field effect transistors (T1, T2) to the gates (G1, G2) of the field effect transistors (T1, T2), which reduces the gate-source voltages of the field effect transistors (T1, T2). As a result of this, the output voltage supplied by the band-gap reference voltage source can be lower than customary.

REFERENCES:
patent: 4327320 (1982-04-01), Oguey et al.
patent: 5726563 (1998-03-01), Bolton, Jr.
Eric A. Vittoz and Oliver Neyroud, "A Low-Voltage CMOS Bandgap Reference" IEEE Journal of Solid-State Circuits, vol. SC-14, No. 3, Jun. 1979, pp. 573-577.

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