Band-gap reference voltage generator

Details Band-gap reference voltage generator Band-gap reference voltage generator

2009-04-22

2011-11-15

Nguyen, Matthew (Department: 2838)

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

C323S315000

Reexamination Certificate

active

08058863

ABSTRACT:
A band-gap reference voltage generator is provided. N-channel metal oxide semiconductor (NMOS) transistors are respectively connected to bipolar transistors in parallel. A Complementary To Absolute Temperature (CTAT) voltage that is inversely proportional to absolute temperature is reduced by a threshold voltage of the NMOS transistor. A weight for a temperature coefficient of a Proportional To Absolute Temperature (PTAT) voltage that is directly proportional to absolute temperature is reduced and a resistance ratio for a temperature coefficient of 0 is reduced by about ½, thereby miniaturizing the band-gap reference voltage generator. A reference voltage lower than or equal to 1 V can be provided by resistors respectively connected to the bipolar transistors in parallel.

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