Ballistic transport-type semiconductor device for deflecting ele

Details Ballistic transport-type semiconductor device for deflecting ele Ballistic transport-type semiconductor device for deflecting ele

1982-01-20

1986-01-07

Larkins, William D.

357 15, 357 58, H01L 2976

Patent

active

045636966

ABSTRACT:
A semiconductor device having a structure originating from field effect transistors of a vertical configuration type in which a deflection is brought about between the electrons so as to be able to switch in an ultra-rapid manner a current or signal, or produce a phase shift. In a very thin monocrystalline gallium arsenide film, a certain number of cells are produced for this purpose and each of them includes a cathode, a first gate electrode embedded in the semiconductor material, a second gate electrode and at least one anode electrode serving as a target for the ballistic electrons. The electron beam is deflected as a function of the different polarizations applied to the gate electrodes.

REFERENCES:
patent: 3560963 (1971-02-01), Trilling
patent: 3593045 (1971-07-01), Bartelink et al.
patent: 4129880 (1978-12-01), Vinal
patent: 4254430 (1981-03-01), Beneking
patent: 4366493 (1982-12-01), Braslau et al.
IEEE Transactions on Electron Devices, vol. ED-27, No. 6, Jun. 1980, C. O. Bozler et al., "Fabrication and Numerical Simulation of the Permeable Base Transistor", pp. 1128-1141.

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