Ballistic transport MESFET

Details Ballistic transport MESFET Ballistic transport MESFET

1981-10-13

1988-08-30

James, Andrew J.

357 15, 357 56, H01L 2980, H01L 2908, H01L 2956

Patent

active

047680717

ABSTRACT:
Field effect transistors are provided and more particularly those which work at very high frequencies.
According to the invention the field effect transistor has a vertical structure, comprising an access electrode, source or drain, on each of the two faces of the substrate wafer. The gate is formed by an N type epitaxial layer thickness sandwiched between two N.sup.+ type layers. The gate thickness is then limited by the epitaxial layer thickness which can be obtained of the order of a few hundred angstroms. The gate contact is taken by means of lateral metal layers, on the chamfered sides of the epitaxial layer.

REFERENCES:
patent: 3660180 (1972-05-01), Wajda
patent: 3761785 (1973-09-01), Pruniaux
patent: 4129879 (1978-12-01), Tantraporn et al.
patent: 4343015 (1982-08-01), Baliga et al.
patent: 4366493 (1982-12-01), Braslau et al.
"Growing High Resistivity Films on Low Resistivity Silicon Substrates", Doo et al., IBM Tech. Disclosure Bull., vol. 5, No. 2, Jul. 1982, pp. 50-51.

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