Ballistic semiconductor device

Details Ballistic semiconductor device Ballistic semiconductor device

2004-04-14

2008-08-19

Pham, Thanh V (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S565000, C257SE21395

Reexamination Certificate

active

07414261

ABSTRACT:
A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.

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Chiu et al.; “Base Transit in Abrupt GaN/InGaN/GaN HBT's”;IEEE Transactions on Electron Devices; vol. 47, No. 4; pp. 662-666; c. 2000.

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