Ballistic heterojunction bipolar transistor

Details Ballistic heterojunction bipolar transistor Ballistic heterojunction bipolar transistor

1985-09-03

1987-06-09

Carroll, J.

357 4, 357 34, 357 61, H01L 2712, H01L 29161, H01L 2972

Patent

active

046724044

ABSTRACT:
A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base region at the maximum velocity obtainable without scattering electrons to the upper valleys. In this manner the electrons bay be transported across the base region virtually without collisions and at a velocity approximately 10 times that of normal electron diffusion across the base region, thus increasing the frequence response of the transistor.

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Lester F. Eastman, "Ballistic Electrons in Compound Semiconductors", IEEE Spectrum, (Feb. 1986), pp. 42-45.
W. P. Dumke et al., "Heterostructure Long Lifetime Hot Electron Transistor", IBM Technical Disclosure Bulletin, vol. 24 (1981), pp. 3229-3231.
H. J. Hovel, "Graded Bandgap Heterojunction Bipolar Transistor", IBM Technical Disclosure Bulletin, vol. 22 (1980), p. 3875.
Herbert Kroemer, "Heterostructure Bipolar Transistors and Integrated Circuits", Proceedings of the IEEE, vol. 70, No. 1, Jan. 1982.

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