Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Ballistic transport device
Reexamination Certificate
2007-07-24
2009-08-18
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Ballistic transport device
C257S024000, C257S026000, C257SE29069, C257SE21395
Reexamination Certificate
active
07576353
ABSTRACT:
A quantum well is formed in a substrate to define a hub, ports extending from the hub, and a deflective structure in the hub. Electrons move through the hub and ports according to the ballistic electron effect. Gates control the movement of the electrons, causing them to be incident on the deflective structure on one side or the other, thus controlling the direction in which they are deflected and the port through which they pass.
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patent: 2006/0035173 (2006-02-01), Davidson et al.
Song, A.M. et al., “Nonlinear Electron Transport in an Asymmetric Microjuntion: A Ballistic Rectifier,” Physical Review Letters, vol. 80, No. 17, Apr. 27, 1998, pp. 3831-3834.
Song, A.M., “Room-Temperature Ballistic Nanodevices”, Encyclopeida of Nanoscience and Nanotechnology, vol. X, American Scientific Publishers 2004, pp. 1-19.
Diduck Quentin
Margala Martin
Blank Rome LLP
Mandala Victor A
Stowe Scott
University of Rochester
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