Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1997-08-29
2000-10-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257580, 257581, 257582, 257586, H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
061304719
ABSTRACT:
A ballasted transistor structure reduces thermal runaway. A heterojunction bipolar junction transistor array includes a plurality of transistors, each having an emitter, a base and a collector. Each of the bases is an alloy of silicon and germanium and each of the collectors and emitters is silicon. A ballast resistor, of doped silicon, that prevents thermal runaway, is electrically connected to each of the collectors.
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Mintel William
The Whitaker Corporation
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