Patent
1978-01-18
1985-12-24
Clawson, Jr., Joseph E.
357 20, 357 36, 357 68, 357 86, H01L 2974
Patent
active
045610088
ABSTRACT:
A gate controlled semiconductor device comprises a cathode region having a current defocusing region associated therewith. The defocusing region is unmetallized but substantially completely surrounded by cathode metallization. The defocusing region comprises only a relatively small percentage of the total cathode region and conducts current during the on-state of the device. However, during turn-off of the device substantially all of the conducting plasma is forced to flow in the defocusing region.
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patent: 3914781 (1975-10-01), Matsushita et al.
D. Carley et al., "The Overlay Transistor, PT.I: New Geometry Boosts Power", Electronics, Aug. 23, 1965, pp. 70-84.
J. Gillett, "Power Transistor Having Incr. Rev. Bias Safe Operating Area", IBM Tech. Discl. Bull., vol. 16, #11, Apr. 1974, p. 3642.
Clawson Jr. Joseph E.
Cohen Donald S.
Morris Birgit E.
Ochis Robert
RCA Corporation
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