Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1995-06-07
2000-05-16
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257578, 257579, H01L 27082
Patent
active
060641096
ABSTRACT:
A semiconductor device includes an emitter region, a contact region, and a resistive medium. The resistive medium is connected between the contact region and the emitter region. The contact region and the emitter region each include an edge facing each other. At least a portion of the emitter region edge and at least a portion of the contact region edge are non-parallel relative to each other. This configuration enables an emitter ballast resistance to be provided with varied emitter current flow along the injecting edge of the emitter. Furthermore, by including an additional contact and an additional resistive medium between the contacts, the ballast resistance of the semiconductor device can be increased without decreasing the figure of merit of the device.
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D.R. Carley, Power Transistor Design, Radio Corporation of America, Components and Devices, Somerville, New Jersey (Apr., 1967).
Blanchard Richard A.
Imhauser William P.
Eckert II George C.
Galantha Theodore E.
Jorgenson Lisa K.
Ratner Allan
Saadat Mahshid
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