Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Patent
1996-04-30
1997-06-17
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
257693, 257698, 257700, 257780, H01L 2348, H01L 2352, H01L 2940
Patent
active
056400470
ABSTRACT:
A semiconductor device comprises a circuit substrate being provided with a first lead pattern and a second lead pattern on a front surface and rear surface thereof respectively. The first lead pattern includes a die mounting region and conductive leads. The second lead pattern includes first outer connecting terminal lands connected with the die mounting region by way of first vias, second outer connecting terminal lands connected with the conductive leads of the first lead pattern by way of second vias, and a ground plane connected with the first outer connecting terminal lands while being electrically and magnetically shielded from the second outer connecting terminal lands. Solder balls are mounted on the first and second outer connecting terminal lands respectively. A semiconductor die is fixedly mounted on the die mounting region. Bonding wires connect electrode pads mounted on the semiconductor die with the conductive leads respectively. A resin package seals the semiconductor die and the bonding wires on the front surface of the circuit substrate. The semiconductor device effectively restricts the occurrence of cross talk noises caused by parasitic current on the conductive layer, improves heat diffusion of the semiconductor device and effectively prevents malfunctions of semiconductor devices caused by electromagnetic noises.
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Mitsui High-Tec, Inc.
Ngo Ngan V.
Wilson Allan R.
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