Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Entirely of metal except for feedthrough
Patent
1998-04-15
2000-05-09
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Entirely of metal except for feedthrough
257697, 257787, 257700, 257783, H01L 2310, H01L 2348, H01L 2328
Patent
active
060607785
ABSTRACT:
Disclosed is a packaged integrated circuit device with high heat dissipation performance and low weight. The packaged integrated circuit device includes an interconnection substrate having at least one layer of conductive trace material and at least one layer of insulating material and also having a first surface and a second surface disposed opposite to the first surface and having a plurality of electrical contacts formed on the second surface. At least one metal thermal conductive layer having a first surface is attached on the first surface of the interconnection substrate and having a second surface exposed to an exterior. A through hole region is formed in the interconnection substrate and the thermal conductive layer. An integrated circuit chip having a first surface exposed to an exterior and having also a second surface with a plurality of bond pads, opposite to the first surface of the integrated circuit chip, is placed within the through hole region. A plurality of bond wires make an electrical connection of the bond pads with the conductive trace layers. The bond wires and the integrated circuit chip are enclosed with an insulating encapsulant material. The through hole region is also filled with the insulating encapsulant material.
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English translation of Purpose and Constitution for KR97-13234 (Mar. 29, 1997).
English translation of Purpose and Constitution for JP4-119653 (Apr. 21, 1992).
Choi Keun Hyoung
Jeong Tae Sung
Lee Tae Keun
Park Jum Sook
Ryu Ki Tae
Clark Jhihan B.
Hyundai Electronics Industries Co,. Ltd.
Saadat Mahshid
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