Backside thinning of image array devices

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S010000, C257S291000, C257S433000, C257S434000

Reexamination Certificate

active

07042060

ABSTRACT:
Backthinning in an area selective manner is applied to imaging sensors12for use in electron bombarded devices. A further arrangement results in an array of collimators51aligned with pixels42or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer52on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer52optimizes electron collection at the pixel array.

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VLSI Technology (Second Edition) by S. M. Sze, McGraw-Hill series in electrical engineering.
Copyright dated 1988, pp. 14-23 and 206-212.

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